砷化镓基系Ⅲ-Ⅴ族化合物半导体太阳电池的发展和应用(6)
向贤碧,廖显伯
摘要(Abstract):
<正>1997年Olson等提出采用Ga_(1-x)In_xN_(1-y)As_y四元系材料来研制第三结子电池,因为这是化合物半导体材料中,唯一一种可通过调节x、y值(Ga_(0.93)In_(0.07)N_(0.023)As_(0.977)),既能得到约1 eV的带隙,又与GaAs晶格匹配的材料[24]。但是,带隙为1 eV的窄带隙Ga_(1-x)In_xN_(1-y)As_y材料的质量差,与N相
关键词(KeyWords):
基金项目(Foundation):
作者(Author): 向贤碧,廖显伯
参考文献(References):
- [24]Patel P,Aiken D,Boca A,et al.Experimental results fromperformance improvement and radiation hardening of invertedmetamorphic multi-junction sorlar cells[A].Proceedings of 37thIEEE PVSC[C],Seattle,Washington,2011.
- [25]Luque A,Hegedus S.Photovoltaic concentrators,chapter10 in handbook of photovoltaics engineering[M].Chichester:JohnWiley and Sons,2011.
- [26]Kurtz S R,Myers D,Olson J M.Projected performanceof three-and four-junction devices using Ga As and Galn P[A].Proceedings of 26th PVSC[C],Anaheim,CA,1997.
- [27]King R R,Boca A,Hong W,et al.Band-gap-engineeredarchitectures for high-effi ciency multijunction concentrator solarcells[A].24th European Photovoltaic Solar Energy Conference andExhibition[C],Hamburg,Germany,2009,55-61.
- [28]Guter W,Sch?ne J,Philipps S P,et al.Current-matchedtriple-junction solar cell reaching 41.1%conversion efficiencyunder concentrated sunlight[J].Applied Physics Letters,2009,94(22):223504.