砷化镓基系Ⅲ-Ⅴ族化合物半导体太阳电池的发展和应用(6)
向贤碧,廖显伯
摘要(Abstract)：
<正>1997年Olson等提出采用Ga_(1-x)In_xN_(1-y)As_y四元系材料来研制第三结子电池,因为这是化合物半导体材料中,唯一一种可通过调节x、y值(Ga_(0.93)In_(0.07)N_(0.023)As_(0.977)),既能得到约1 eV的带隙,又与GaAs晶格匹配的材料[24]。但是,带隙为1 eV的窄带隙Ga_(1-x)In_xN_(1-y)As_y材料的质量差,与N相
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作者(Author): 向贤碧,廖显伯
参考文献(References)：
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