硅太阳电池前表面发射极钝化研究
刘文峰,周大良,杨晓生,成文,姬常晓
摘要(Abstract)：
介绍了表面钝化技术在晶体硅太阳电池中的发展和应用,详细阐述了采用热氧化和氢氟酸减薄的方法来制备SiO2钝化膜。实验分别采用800℃、850℃、900℃和950℃对发射极进行热氧化,通过浓度2.5%的HF将钝化膜减薄,制备成电池片。通过测试氧化前后电性能参数、扩散方阻、接触电势和量子效率的变化,确认了最佳氧化条件。实验表明:在850℃、15 min的条件下,SiO2钝化膜能很好地降低硅片的表面复合,提升短波响应,使开路电压和短路电流均得到提升,平均转换效率提高0.23%。
关键词(KeyWords)： 硅太阳电池;表面钝化;表面复合
基金项目(Foundation): 国家科技部863计划课题资助项目(2012AA050303)
作者(Author): 刘文峰,周大良,杨晓生,成文,姬常晓
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