李烨,涂洁磊

• 1:云南师范大学太阳能研究所
• 2:教育部可再生能源材料先进技术与制备重点实验室
• 3:云南省农村能源工程重点实验室

摘要(Abstract)：

介绍了目前砷化镓量子点太阳电池的研究现状,主要包括:量子点太阳电池理论分析、量子点结构材料生长与性能表征、量子点太阳电池器件结构设计与制备技术三方面。此外,在对目前研究中所存在的难点问题进行分析后,认为制备高质量的量子点结构材料以及优化量子点太阳电池结构设计是目前获得高性能量子点电池的关键。

关键词(KeyWords)： 量子点;砷化镓太阳电池;材料生长;结构设计

Abstract:

Keywords:

基金项目(Foundation): 云南省重点基金项目(2009CC012);; 霍英东青年教师基金项目(111061);; 云南省中青年学术技术带头人后备人才(2008PY054);; 云南省应用基础研究计划面上项目(2007E197M)

作者(Author): 李烨,涂洁磊

参考文献(References)：

• [1]卢金军,童菊芳.半导体量子点的制备、性质和应用[J].孝感学院学报,2007,sl:144-148.
• [2]Ryne P.Raffaelle,Stephanie L.Castro,et al.Quantum dot solar cells[J].Prog.Photovolt:Res.Appl.,2002,10:433 - 439.
• [3]Nozik A J.Quantum dot solar cells[J].Physica E:Low-dimensional Systems and Nanostructures,2002,14:115 - 120.
• [4]郭爱萍,孙强.基于GaAs半导体太阳电池技术发展概况[J].电源技术,2007,9:757-758.
• [5]张忠卫,陆剑峰,池卫英,等.砷化镓太阳电池技术的进展与前景[J].上海航天,2003,3:33-38.
• [6]何炜瑜.GaAs系列太阳电池技术与发展[J].中国民航学院学报,2004,22(2):59-64.
• [7]赵凤瑷,张春玲,王占国.半导体量子点及其应用(I)[J].物理, 2004,33(4):249-256.
• [8]赵凤媛,张春玲,王占国.半导体量子点及其应用(П)[J].物理, 2004,33(5):327-334.
• [9]薛钰芝.量子点材料光伏电池的研究[J].太阳能,2007,1:15-16.
• [10]Raffaelle R P,Samar Sinharoy,John Andersen,et al.Multijunction solar cell spectral tuning with quantum dots[A].2006 IEEE 4th WCPEC[C],2006,162 - 166.
• [11]陈云生.利用半导体量子点的高效太阳电池[J].太阳能,2004, 4:38-40.
• [12].Nozik A J.Multiple exciton generation in semi-conductor quantum dots[J].Chemical Physics Letters,2008,457:3 - 11.
• [13]Aroutiounian V,Petrosyan S,Khachatryan A.Studies of the Photocurrent in quantum dot solar cells by the application of a new theoretical model[J].Solar Energy Materials and Solar Cells,2005, 89(1-3):165 - 173.
• [14]Laouthaiwattana K,Tangmattajittakul O,Suraprapapich S,et al. Optimization of stacking high-density quantum dot molecules for photovoltaic effect[J].Solar Energy Materials and Solar Cells,2009, 93(6-7):746 - 749.
• [15]Samar Sinharoy,King C W,Bailey S G,et al.InAs quantum dot development for enhanced InGaAs space solar cells[A].31st IEEE Photovoltaics Specialists Conference[C],2005,94 - 97.
• [16]Ryne P.Raffaelle,Samar Sinharoy,C.William.King,et al.InAs quantum dots for space solar cells[A].Seventh European Space Power Conference[C],Italy,2005.
• [17]Hubbard S M,Bailey C G,et al.Short circuit current enhancement of GaAs solar cells using strain compensated InAs quantum dots[A]. Proc.of 33rd IEEE Photovoltaic Specialists Conf.[C],2008:1 - 6.
• [18]楚海建,陈建康,王建祥.半导体量子点结构的特性及力学研究进展[J].力学进展,2007,37(4):481-495.
• [19]Liang S,Zhu H L,Pan J Q,et al.Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD[J]. Journal of crystal growth,2005,282(3-4):297 - 304.
• [20]Liang S,Zhu H L,Pan J Q,et al.Growth of InAs quantum dots on vicinal GaAs(100) substrates by metalorganic chemical vapor deposition and their optical properties[J].Journal crystal growth, 2006,289(2):477 - 484.
• [21]Ryuji Oshima,Takayuki Hashimoto,Hidemi Shigekawa,et al. Fabrication of multi-layer self-assembled InAs quantum dots for high-efficiency solar cells[A].2006 IEEE 4th World Conference[C], 2006:158 - 161.
• [22]Ryuji Oshima,Yuta Nakamura,Ayami Takata,et al.Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dots[J].Journal of crystal growth,2008,310(7-9):2234-2238.
• [23]Alvarez D A,Taboadal D,Gonzalez AG,et al.Stress compensation by GaP monolayers for stacked InAs/GaAs quantum dots solar cells[A].33rd IEEE Photovoltaics Specialists Conference[C], 2008,1 - 6.
• [24]Surapol Kamprachum,Supachok Thainoi,Songphol Kanjanachuchai,et al.Multi-stacked InAs/GaAs quantum dot structures and their photovoltaic characteristics[A].3rd World Conference on Pholovoltaic Energy Conversion[C],Japan,2003:259 - 261.
• [25]Engstr(o|¨)m O,Kaniewska M.Deep level transient spec- troscopy in quantum dot characterization[J].Nanoscale research letters,2008, 3(5):179 - 185.
• [26]Fasching G,Schrey F F,Roch T,et al.Single InAs/GaAs quantum dots:photocurrent and cross- sectional AFM analysis[J]. Physica E:Low-dimensional Systems and Nanostructures,2006,32 (1-2):183 - 186.