单晶硅PERC高效太阳电池量产工艺研究
蔡先武,周子游,刘文峰
摘要(Abstract):
以Al_2O_3/Si_xN_y为钝化层,制备了PERC单晶硅太阳电池,研究Al_2O_3钝化层厚度对钝化效果的影响,分析硅片少子寿命变化、烧结曲线对PERC电池电性能参数的影响。
关键词(KeyWords): PERC;太阳电池;少子寿命转换效率
基金项目(Foundation):
作者(Author): 蔡先武,周子游,刘文峰
参考文献(References):
- [1]Engelhart P.Next generation high-power silicon cell&module concept[A],Proceedings of the 26th European Photovoltaic Solar Energy Conference[C],Hamburg,Germany,2011.
- [2]Veith B,Dullweber T,Siebert M.Advances in the surface passivation of silicon solar cells[J],Energy Procedia,2012,(27):379-384.
- [3]Hoex B,Heil S B S,Langereis E.Ultrllow surface recombination of c-Si substrates passivativated by plasmaassisted atomic layer deposited Al_2O_3[J],Applied Physics Letters,2006,89(1):042112-042115.
- [4]Hoex B,Schmidt J,Bock R.Excellent passivation of highly doped p-type Si surface by negative-charge-dielectric Al_2O_3[J],Applied Physics Letters,2007,91(11):12107-12110.
- [5]Agostinelli G,Delabie A.Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge[J],Solar Energy Materials&Solar Cell,2006,90(18-19):3438-3443.
- [6]Hoex B,Schmidt J,Pohl P,Kessels W M M.On the c-Si surface passivation mechanism by the negative-charge-dielectric Al_2O_3[J],Journal of Applied Physics,2008,104(12):4903-4097.
- [7]Rothschild A,Vermang B,Loozen X,et al.ALD-Al_2O_3passivation for solar cells:charge investigation[A],Proceedings of the 26th European Photovoltaic Solar Energy Conference[C],Valencia,Spain,2010.
- [8]Werner F,Veith B,Zielke D.Electronic and chemical properties of the c-Si/Al_2O_3 interface[J],Journal of Applied Physics,2011,109(6):113701-113705.
- [9]Vermang B,Goverde H,Lorenz A,et al.On the blistering of atomic layer deposited Al_2O_3 as Si surface passivation[A],Proceedings of the 37th IEEE Photovoltaic Specialists Conference[C],Washington,USA,2011.
- [10]Gro?er S,Swatek S,Pantzer J,Quantification of Void Defects on PERC solar cell rear contacts[J],Energy Procedia,2016,92:37-41.