低频PECVD设备沉积的AlO_x/SiN_x钝化膜的性能研究PERFORMANCE RESEARCH OF AlO_x/SiN_x PASSIVATION FILMS DEPOSITED BY LOW FREQUENCY PECVD
赵增超,李明,周小荣,郭艳,黄嘉斌
摘要(Abstract):
对低频PECVD设备沉积的应用于PERC太阳电池上的AlO_x/SiN_x钝化膜的性能进行了研究。通过少子寿命测试发现,低频PECVD设备直接沉积的AlO_x/SiN_x钝化膜的钝化性能较弱,载流子复合严重;利用傅里叶红外光谱(FTIR)对造成该现象的原因进行了分析,结果发现,一是因为Si-AlO_x界面无足够的氧化层,二是因为AlO_x膜层内的Al-O四面体结构占比偏小。通过在低频PECVD设备沉积AlO_x膜后通入N_2O/NH_3气体进行等离子体表面处理工艺,抑制了表面的载流子复合,显著改善了AlO_x/SiN_x钝化膜的钝化性能,使小批量生产的PERC太阳电池的平均转换效率达到了22.48%。
关键词(KeyWords): 低频PECVD设备;氧化铝;少子寿命;等离子体表面处理;钝化;太阳电池
基金项目(Foundation): 湖南省创新型省份建设专项——湖南省晶体硅太阳能电池工程技术研究中心(2019TP2048)
作者(Author): 赵增超,李明,周小荣,郭艳,黄嘉斌
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