双氧水的杂质含量对多晶硅片制绒的影响Effect of impurity content of hydrogen peroxide on the fluffing of polycrystalline silicon wafers
于琨,王占友,郑海陆,郭明州,李会玲,贺美亮
摘要(Abstract)：
通过硅片减重、表面反射率及SEM测试方法,首次研究了双氧水杂质含量对银铜双离子制绒的影响。结果显示,杂质含量高的双氧水使硅片制绒后比杂质含量低的单片平均少减重0.03 g,同时导致表面反射率高2%;其制备的多晶硅电池的测试参数表现为短路电流降低30 mA,绝对效率降低0.06%。研究结果对于选择合适的双氧水制绒以提升太阳电池效率具有积极意义。
关键词(KeyWords)： 双氧水;杂质;制绒;缓蚀剂
基金项目(Foundation):
作者(Author): 于琨,王占友,郑海陆,郭明州,李会玲,贺美亮
参考文献(References)：
- [1]Wang Y,Yang L X,Liu Y P,et al.Maskless inverted pyramid texturization of silicon[J].Scientific Reports,2015,(5):10843.
- [2]Wu J T,Liu Y P,Chen Q S,et al.The orientation and optical properties of inverted-pyramid-like structures on multi-crystalline silicon textured by Cu-assisted chemical etching[J].Solar Energy,2018,171:675-680.
- [3]郑超凡,沈鸿烈,蒲天,等.银铜双原子MACE法制备多晶硅陷光结构及其性能的研究[J].功能材料,2017,48(1):1230-1235.
- [4]郑超凡,沈鸿烈,蒲天,等.银铜双原子MACE法可控制备倒金字塔多晶黑硅的结构与性能[J].光子学报,2017,46(1):52-58.
- [5]Huang Z P,Shimizu T,Senz S,et al.Oxidation Rate Effect on the Direction of Metal-Assisted Chemical and Electrochemical[J].The Journal of Physical Chemistry,2010,(11):10683-10690.
- [6]任格格,丁红旗.单晶黑硅结构的制备及其陷光性能[J].电子元件与材料,2018,(5):40-46.
- [7]陈文,陈乐.微纳混合结构黑硅的制备及其关键工艺技术讨论[J].发光学报,2017,(11):1486-1492.
- [8]武晓玮,李佳艳,谭毅.金刚石线锯切割多晶硅片表面制绒工艺研究[J].无机材料学报,2017,(9):985-990.
- [9]Lee H,Lim J,Lee C,et al.Boosting hot electron flux and catalytic activity at metal-oxide interfaces of PtCo bimetallic nanoparticles[J].Nature Communications,2018,9(1):2235.
- [10]Kim J,Park W H,Doh W H,et al.Adsorbate-driven reactive interfacial Pt-NiO1-x nanostructure formation on the Pt3Ni(111)alloy surface[J].Science Advances,2018,4(7):eaat3151.
- [11]沈鸿烈,蒋晔.基于倒金字塔减反射结构的多晶黑硅及其高效太阳电池[J].南京航空航天大学学报,2017,(5):744-752.
- [12]Yang L,Liu Y,Wang Y,et al.18.87%-efficient inverted pyramid structured silicon solar cell by one-step Cu-assisted texturization technique[J].Solar Energy Materials&Solar Cells,2017,166:121-126.