背面局域点接触对PERC太阳电池性能的影响EffECT Of REAR LOCAL SPOT CONTACT ON PERC SOLAR CELL PERfORMANCE
庞恒强,周雨,贺茂双,王凯辉,常辉东,卞涛,薛凯
摘要(Abstract):
PERC太阳电池因转换效率高、成本低已逐渐成为替代全铝背场(Al-BSF)太阳电池的最佳选择。PERC太阳电池以背面局域点接触的形式替代了全铝背场,减少了背表面复合速率,增加了背反射性能,从而提升了电池的开路电压和短路电流。由于PERC太阳电池中硅片背面钝化介质膜这一绝缘层的存在,因此需要在硅片背面进行激光开槽,以局域去膜,从而形成铝硅接触区。研究后发现:随着背表面场接触面积的减小,背表面场的钝化面积逐渐增大,使铝硅合金层的表面复合速率大幅减小,短路电流和开路电压获得更高的提升。虽然背表面场的接触面积减小后会产生串联电阻升高、填充因子下降的现象,但通过优化背接触电阻、背电极电阻和铝硅合金层的表面复合速率可以减轻这种现象。未来PERC太阳电池可通过合理匹配开槽线间距和背表面场接触面积,实现低背接触电阻和低背表面复合速率,从而可继续提高电池的电性能。
关键词(KeyWords): PERC;太阳电池;激光开槽;背面局域点接触;烧结;背电极电阻;转换效率
基金项目(Foundation):
作者(Author): 庞恒强,周雨,贺茂双,王凯辉,常辉东,卞涛,薛凯
参考文献(References):
- [1]田晨.铝背场钝化工艺的研究[D].上海:上海交通大学,2008.
- [2] YUE Z H, SHEN H L, JIANG Y, et al. Novel and low reflective silicon surface fabricated by Ni-assisted electroless etching and coated with atomic layer deposited Al2O3 film[J]. Applied physics A, 2014, 114(3):813-817.
- [3] SCHMIDT J, WERNER F, VEITH B, et al. Surface passivation of silicon solar cells using industrially relevant Al2O3 deposition techniques[J]. Photovoltaic international,2011, 10:52-57.
- [4] JOONWICHIEN S, SHIRASAWA K, SIMAYI S, et al. Wet oxidation effects on the electrical and interface properties of ALD Al2O3 and ALD-AlOx/SiNx passivation stacks for PERC solar cells[C]//Proceedings of the 32nd European Photovoltaic Solar Energy Conference and Exhibition, June20-24, 2016, Munich, German, 2016.
- [5] MIN B,WAGNER-MOHNSEN H,MULLER M,et al.Incremental efficiency improvements of mass-produced PERC cells up to 24%predicted solely with continuous development of existing technologie sand wafer materials[C]//Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition, September 15,2015, Hamburg, Germany, 2015:473-476.
- [6] GRASSOF S, GAUTERO L, RENTSC H J, et al.Characterisation of local AL-BSF formation for PERC solar cell structures[C]//Proceedings of the 25th Europenan Photovotaic Solar Energy Conference and Exhibition,September 6-10, 2010, Valencia, Spain, 2010.
- [7] FANG T, LIN C M, LIN K J, et al. Metallization of rear-side passivated cells:Reducing cavities on local contacts[C]//Proceedings of the 26th Europenan Photovoltaic Solar Energy Conference and Exhibition, September 5-8, 2011,Hamburg, German, 2011.
- [8] ZHAO J, WANG A, GREEN M A, et al. 19.8%efficient“honeycomb” textured multicrystalline and 24.4%monocrystalline silicon solar cells[J]. Applied physics letters, 1998, 73:1991.
- [9] HERMANN S, DEZHDAR T, HARDER N-P, et al. Impact of surface topography and laser pulse duration for laser ablation of solar cell front side passivating SiNx layers[J].Journal of applied physics, 2010, 108(11):114514.
- [10] SCHNEIDERL?CHNER E, PREU R, LUDEMANN R,et al. Laser fired rear contacts for crystalline silicon solar cells[J]. Progress in photovoltaics research and applications,2002, 10(1):29-34
- [11] ENGELHART P, HARDER N P, HORSTMANN T, et al. Laser ablation of passivating SiNx layer for locally contacting emitters of high-efficiency solar cells[C]//The4th WCPEC, May 7-12, 2006, Waikoloa, HI, USA, 2006.
- [12] ZHAO J H, WANG A H, GREEN M A. 24.5%efficiency silicon PERT cells on MCZ substrates 24.7%effcicency PERL cells on FZ substrates[J]. Progress in photovoltaics,1999, 7(6):471-474.
- [13] Poulain G, Blanc D, Focsa A, et al. Characterization of laser-induced damage in silicon solar cells during selective ablation progress[J]. Materials science and engineering:B,2013, 178(9):682-685.
- [14] HAN Z C, XUE W, FENG A X, et al. A different wavelength of nanosecond pulse laser damage characteristics of polycrystalline silicon research[J]. Applied laser, 2013,3(33):314.
- [15] CHEN J, NI X W, HE A Z. Laser and material interaction physics[M]. Beijing:Machinery Industry Press, 1996.
- [16] ZHANG L C, SHEN H, ZHU Y B, et al. Fabrication of rear side point contact solar cells[EB/OL].[2010-12-23]. https://www. freepatentsonline. com/EP2525416. html.
- [17] KRAUSE J, WOEHL R, RAUER M, et al. Microstructural and electrical properties of different-sized aluminum-alloyed contacts and their layer system on silicon surfaces[J]. Solar energy material&solar cells, 2001, 95:2151-2160.
- [18] YOSHIKAWA T, MORITA K. Solid solubilities and thermodynamic properties of aluminum in solid silicon[J].Journal of the electrochemical society, 2003, 150:465-465.
- [19] GROBER S, SWATEK S, PANTZER J. Quantification of void defects on PERC solar cell rear contacts[J]. Energy procedia, 2016, 92:37-41.
- [20] DONG L, ABBOTT M, LU P H, et al. Incorporation of deep laser doping to form the rear localized back surface field in high efficiency solar cells[J]. Solar energy material&solar cells, 2014, 130:83-90.
- [21] LIND, ABBOTT M, XIAOB, et al. Advanced semiconductor finger solar cell with passivated rear and localized contact[C]//Proceedings of 28th EUPVSEC,September 30-October 4, 2013, Paris.
- [22] CHEN J, TEY Z H J, DU Z, et al. Investigation of screenprinted rear contacts for aluminum local back surface field silicon wafer solar cells[J]. IEEE journal of photovoltaics,2013, 3(2):690-696.
- [23] TJAHJONO B, YANG M J, WU J T V, et al. Optimizing CELCO cell technology in one year of mass production[C]//Proceedings of 28th EUPVSEC, September 30-October 4,2013, Paris.
- [24] CHEN D, DENG W, SHENG J, et al. Verlinden, Preventing the formation of voids in the rear local contact areas for industrial-type PERC solar cells[C]//Proceedings of 28th EUPVSEC, September 30-October 4, 2013, Paris.
- [25] HORBELT R, EBERT S, ULBIKAITE V, et al. Al-density variation as one driving force for void formation in PERC solar cells[J]. Physica staus solidi-rapid research letters,2016, 10(7):515-519.
- [26] DRESSLER K, KRATT M, VOSS P A, et al. Influence of Al particle size and firing profile on void formation in rear local contacts of silicon solar cells[J]. IEEE journal of photovoltaics, 2015, 6(1):68-73.
- [27] CHEN Y, ALTERMATT P P, DONG J, et al. Al-alloyed local contacts for industrial PERC cells by local printing[C]//40th Photovoltaic Specialist Conference(PVSC), June 8-13,2014, Denver, USA, 2014:3322-3325.
- [28] MULLER J, BOTHE K, GATZ S, et al. Modeling the formation of local highly aluminum doped silicon regions by rapid thermal annealing of screen printed aluminum[J].Physica status solidi-rapid research letters, 2012, 6(3):111-113.
- [29] CHEN D M, DENG W W, LI H, et al. Metallization of rear local point-contacts for industrial PERC solar cells[C]//29th EU PCSEC Conference Proceedings, September 22-26,2014, Amsterdam, WIP, 2014.