电注入退火对P型直拉PERC单晶硅太阳电池电性能和抗LID效应的影响INFLUENCE OF ELECTRIC INJECTION ON ELECTRICAL AND LID EFFECT OF p-TYPE Cz-Si PERC SOLAR CELLS
王丽婷,黄国平,黄惜惜,贾佳,龚琴赟,李菁楠
摘要(Abstract):
以p型直拉PERC单晶硅太阳电池为研究对象,研究了电注入退火在不同的电流、时间和温度条件下,电注入退火前、后太阳电池的各项电性能参数的变化,以及经过5 kWh光致衰减(LID)实验后电池电性能参数的变化,实验均采用Halm电学性能测试仪进行测试和分析。结果表明,在目前的电注入设备条件下,以6.0A的电流在180℃温度下处理35min,最有利于p型直拉PERC单晶硅太阳电池由衰减态向再生态转变;电注入退火后,电池转换效率提升了0.8%;在经过5 kWh LID后,电池的转换效率相对于初始值仅降低了0.71%,证明电注入退火可有效降低p型直拉PERC单晶硅太阳电池的LID效应。
关键词(KeyWords): 直拉PERC单晶硅太阳电池;p型;电注入退火;光致衰减;电性能参数
基金项目(Foundation): 国家自然科学基金(61874120);; 江苏省国际科技合作项目(BZ2017033)
作者(Author): 王丽婷,黄国平,黄惜惜,贾佳,龚琴赟,李菁楠
参考文献(References):
- [1]张三洋,沈鸿烈,魏青竹,等.晶硅掺镓抑制太阳电池光致衰减效应的研究[J].人工晶体学报,2016,45(4):1100-1106.
- [2]SCHMIDT J,ABERLE A G,HEZEL R,et al.Investigation of carrier lifetime insabilities in Cz-grown silicon[C]//The26th IEEE Photovoltaic Specialist Conference,September29-October 3,1997,Anaheim,California,USA:13-18.
- [3]SCHMIDT J,BOTHE K,HEZEL R,et al.Structure and transformation of the metastable centre in Cz-Silicon solar cells[J].Physical review B,2004,69(2):024107.
- [4]HERGUTH A,SCHUBERT G,KAES M,et al.A new approach to prevent the negative impact of the metastable defect in boron doped Cz silicon solar cells[C]//2006 IEEE4th World Conference on Photovoltaic Energy Conference,May 7-12,2006,Waikoloa,HI,USA;940-943.
- [5]WILKING S,BECKH C,EBERT S,et al.Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes[J].Solar energy materials&solar cells,2014,131(58):2-8.
- [6]WILKING S,FORSTER M,HERGUTH A,et al.From simulation to experiment:Understanding BO-re gene ration kinetics[J].Solar energy materials&solar cells,2015,142:87-91.
- [7]NIEWELT T,JONAS S,WARTA W,et al.Degradation of crystalline silicon due to boron-oxygen defects[J].IEEE journal of photovoltaics,2016,7(1):1-16.
- [8]CHAN E,PAYNE R,HALLAM J,et al.Rapidstabilization of high-performance multi-crystalline p-type silicon PERC cells[J].IEEE journal of photovoltaics,2017.6(6):1473-1479.
- [9]PAYNE R,CHAN E,HALLAM J,et al.Acceleration and mitigation of carrier-induced degradation in p-type multicrystalline silicon[J].Physica status solidi,2016,10(3):237-241.
- [10]HALLM J,HAMER G,WANG S,et al.Advance hydrogenation of dislocation clusters and boron-oxygen defects in silicon solar cell[J].Energy procedia,2015,77:799-809.
- [11]彭嘉琪,沈鸿烈,魏青竹,等.电注入退火对多晶硅PERC太阳电池性能的影响[J].光子学报,2019,48(6):0616002-0616009.
- [12]王泽辉,沈鸿烈,魏青竹,等.电注入退火条件对铸造单晶硅PERC电池抗LID效应影响的研究[J].半导体光电,2019,40(6):771-780.
- [13]叶家兴.掺硼P型单晶硅太阳电池的光衰及复原规律的研究[D].广州:中山大学,2018.
- [14]邱德鹏.硅基太阳电池光致衰减效应研究[D].广州:中山大学,2017.
- [15]梁润雄,艾斌,金井升,等.利用正交实验法探究掺硼p型单晶硅PERC电池的电致复原最优条件[J].中山大学学报,2019,58(6):81-89.